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Vaisala Berner International GmbH MT-Messtechnik Pfennig Reinigungstechnik GmbH



Figure 1. Representative 0.55NA EUV wafer SEM images showing CAR patterning on tight-pitch logic metal and via structures, including SRAM (AEI), PnR (AEI), meander e-test (ADI), and 28nm C2C random logic vias (ADI) (AEI = after etch inspection; ADI = after development inspection).
  • Electronics (wafers, semiconductors, microchips,...)

Imec and its material suppliers optimize their chemically amplified resist (CAR)-based platforms toward High NA EUV single patterning of 22nm pitch line structures supporting A14/A10 logic designs

Imec demonstrates the extension of chemically amplified resists for High NA EUV lithography

– Imec optimizes CAR-based technology for the High NA EUV single patterning of several layers of the A14/A10 logic technology nodes.
– A variety of tight-pitch logic metal line and via structures have been demonstrated, including meander and forked e-test structures down to 22nm pitch, 24nm SRAM layo…

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