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- Electronics (wafers, semiconductors, microchips,...)
Novel 300mm integration approach for 2D-material based devices enables scaled n and pFETs with 50nm contacted poly pitch.
ASML, TSMC and imec bring industry-ready 2D-material transistors closer with breakthrough 300mm integration
– ASML, TSMC, and imec introduce an innovative 300-mm integration process for transistors based on 2D materials, enabling the first scalable n- and p-FETs with a contact pitch (CPP) of 50 nm, structured using EUV lithography.
– Good results were achieved with scaled nFETs (with MoS2 channel) and pFET…








