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All publications for the rubric Science

Process cross-sections of the high-voltage components fabricated on 200 mm GaN-on-SOI substrates (a) e-mode pGaN-HEMT, (b) d-mode MIS-HEMT, (c) Schottky barrier diode. All devices include metal field plates based on front-end and interconnect metal layers and separated by dielectric layers.
  • Science

The addition of these components will boost the performance of GaN power systems

Imec demonstrates successful monolithic integration of Schottky diodes and depletion-mode HEMTs with 200 V GaN-IC

This week, at the 2021 International Electron Devices Meeting (IEEE IEDM 2021), imec, a world-leading research and innovation center in nanoelectronics and digital technologies, presents the successful co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEM…

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PMS MT-Messtechnik Vaisala Systec & Solutions GmbH