2D materials paving the way to extreme scaling for logic and memory transistors
Imec shows excellent performance in ultra-scaled FETs with 2D-material channel
At this year’s IEEE International Electron Devices Meeting (Dec 7-11 2019), imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, reports an in-depth study of scaled transistors with MoS2 and demonstrates best device performance to date for such materials.
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