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All publications for the rubric Know How, Institut

4-inch GaN-on-SiC wafer of Fraunhofer IAF's GaN07 technology. The wafers are fully manufactured and tested in-house in the Fraunhofer IAF semiconductor line, including design, epitaxy, wafer processing, and characterization. © Fraunhofer IAF / Frontside processed 4-inch GaN-on-SiC wafer of Fraunhofer IAF's GaN07 technology. The wafers are completely fabricated and tested in Fraunhofer IAF's III-V process line, including design and fabrication of processing mask sets, epitaxy, wafer processing, and characterization. © Fraunhofer IAF
  • Know How, Institut

EuMW 2025: Fraunhofer IAF presents 70 nm GaN transistor for high-throughput satellites

Semiconductor technology for broadband satellite communications achieves record efficiency

Researchers at Fraunhofer IAF have developed a GaN transistor technology with a gate length of 70 nm that achieves record efficiency values under typical satellite conditions. In the future, this technology aims to enable compact active antennas for high-bitrate data transfers in the Ka, Q, and W-ba…

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