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Der neue Impulsradio-Ultrabreitband-Senderchip von Imec ermöglicht Datenübertragungsraten von bis zu 1,66 Gb/s für In-Body- und Kurzstrecken-Anwendungen. / Imec’s new impulse-radio ultra-wideband transmitter chip accommodates data transfer rates up to 1.66Gb/s for in-body and short-range applications.
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  • Trade fair

ISSCC ’22 contribution confirms that UWB technology is capable of supporting low-power, high-bitrate applications – from smart glasses delivering tomorrow’s AR/VR experiences, to wireless telemetry modules for intracortical sensing.

Imec Pioneers Ultra-Wideband Transmitter Chip That Pushes Data Rates up to 1.66Gb/s with Milliwatt Power

At this week’s International Solid-State Circuits Conference (ISSCC), imec – a world-leading research and innovation hub in nanoelectronics and digital technologies – presents a new impulse-radio ultra-wideband (IR-UWB) transmitter chip that could redefine the future of UWB technology.

Fabricated in 28n…
Prozessquerschnitte der auf 200 mm GaN-auf-SOI-Substraten hergestellten Hochspannungsbauelemente (a) e-mode pGaN-HEMT, (b) d-mode MIS-HEMT, (c) Schottky-Barrier-Diode. Alle Bauelemente enthalten metallische Feldplatten, die auf Front-End- und Interconnect-Metallschichten basieren und durch dielektrische Schichten getrennt sind. / Process cross-sections of the high-voltage components fabricated on 200 mm GaN-on SOI substrates (a) e-mode pGaN-HEMT (b) d-mode MIS-HEMT, (c) Schottky barrier diode. All devices include metal field plates based on front-end and interconnect metal layers and separated by dielectric layers.
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  • Science

The addition of these components will boost the performance of GaN power systems

Imec demonstrates successful monolithic integration of Schottky diodes and depletion-mode HEMTs with 200 V GaN-IC

This week, at the 2021 International Electron Devices Meeting (IEEE IEDM 2021), imec, a world-leading research and innovation center in nanoelectronics and digital technologies, presents the successful co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEM…
Ein Diced-GaN-Wafer, ähnlich dem, was die Gewinner mit imec herstellen werden können. / A diced GaN wafer, similar to what winners will be able to produce with imec.
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  • Award

Contest aims to stimulate innovation in power electronics, leveraging GaN technology to create higher power, smaller and faster components that increase devices’ power density

Imec and EUROPRACTICE announce winners of 2021 GaN-IC technology design contest

Imec, the world-leading research and innovation center in nanoelectronics and digital technologies, and EUROPRACTICE announced today the winners of their 2021 GaN-IC design contest. The contest aims to encourage innovation in power electronics applications using imec’s Gallium Nitride technology f…
Ein Demonstrationsmuster des von imec entwickelten Atemtestgeräts. (Bild: imec)
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  • Company

Imec schließt Lizenzvertrag mit miDiagnostics über die Vermarktung seiner patentierten Technologie zur schnellen und zuverlässigen COVID-19-Diagnose anhand der Atemluft ab

Imec, weltweit führendes Forschungs- und Innovationszentrum für Nanoelektronik und Digitaltechnik, und miDiagnostics, ein Spin-off von imec in einem Kooperationsverbund mit der Johns Hopkins University, das sich auf die Entwicklung von Point-of-Care-Tests für das Screening, die Diagnose und die Å
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C-Tec Becker ASYS Buchta