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All publications from IMEC Belgium

Process cross-sections of the high-voltage components fabricated on 200 mm GaN-on-SOI substrates (a) e-mode pGaN-HEMT, (b) d-mode MIS-HEMT, (c) Schottky barrier diode. All devices include metal field plates based on front-end and interconnect metal layers and separated by dielectric layers.
  • Science

The addition of these components will boost the performance of GaN power systems

Imec demonstrates successful monolithic integration of Schottky diodes and depletion-mode HEMTs with 200 V GaN-IC

This week, at the 2021 International Electron Devices Meeting (IEEE IEDM 2021), imec, a world-leading research and innovation center in nanoelectronics and digital technologies, presents the successful co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEM…

A diced GaN wafer, similar to what the winners will be able to produce with imec.
  • Award

Contest aims to stimulate innovation in power electronics, leveraging GaN technology to create higher power, smaller and faster components that increase devices’ power density

Imec and EUROPRACTICE announce winners of 2021 GaN-IC technology design contest

Imec, the world-leading research and innovation center in nanoelectronics and digital technologies, and EUROPRACTICE announced today the winners of their 2021 GaN-IC design contest. The contest aims to encourage innovation in power electronics applications using imec’s Gallium Nitride technology for…

A demonstration model of the breath test device developed by imec. (Image: imec)
  • Company

Imec terminates licensing agreement with miDiagnostics regarding the commercialization of its patented technology for rapid and reliable COVID-19 diagnosis via breath analysis

Imec, a globally leading research and innovation center for nanoelectronics and digital technology, and miDiagnostics, a spin-off from imec in collaboration with Johns Hopkins University, which specializes in the development of point-of-care tests for screening, diagnosing, and monitoring a variety…

Vertical buffer leakage current in forward conduction, measured on 1200V GaN-on-QST® at two different temperatures: (left) 25°C and (right) 150°C. Imec’s 1200V buffer shows a vertical leakage current below 1µA/mm² at 25°C and below 10µA/mm² at 150°C up to 1200V with a breakdown voltage exceeding 1800V at both 25°C and 150°C, making it suitable for the processing of 1200V devices.

This breakthrough result paves the way for GaN to enter into the SiC high voltage domain

Imec and AIXTRON Demonstrate 200 mm GaN Epitaxy on AIX G5+ C for 1200V Applications with Breakdown in Excess of 1800V

Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, and AIXTRON, the leading provider of deposition equipment for compound semiconductor materials, have demonstrated epitaxial growth of gallium-nitride (GaN) buffer layers qualified for 1200V applications on…

The Neuropixels 2.0 probe (bottom) is smaller than the first generation (top) and can monitor neural activity over weeks.

A new generation of miniature recording probes can track the same neurons inside tiny mouse brains over weeks — and even months

Latest Neuropixels probes can track neurons over weeks

The new tools build on the success of the original Neuropixels probes released in 2017 and currently used in more than 400 labs. Neuropixels 2.0 are much smaller — about a third the size of their predecessors. They’re designed to record the electrical activity from more individual neurons and have t…

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