
New method allows IC manufacturers to reach scaling levels at 20nm and beyond, without compromising speed and device cross-talk
Imec reveals method of damage free cryogenic etching of ultralow-k dielectrics
Imec today announced a cryogenic etching method that protects the surface of porous ultralow-k dielectrics against excessive plasma induced damages.
As semiconductor technology scales below the 20nm node, the capacitance increases between nearby conductive portions of high-density integrated circuits…