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- Know How, Institut
EuMW 2025: Fraunhofer IAF presents 70 nm GaN transistor for high-throughput satellites
Semiconductor technology for broadband satellite communications achieves record efficiency
Researchers at Fraunhofer IAF have developed a GaN transistor technology with a gate length of 70 nm that achieves record efficiency values under typical satellite conditions. In the future, this technology aims to enable compact active antennas for high-bitrate data transfers in the Ka, Q, and W-ba…