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4-Zoll-GaN-auf-SiC-Wafer der GaN07-Technologie des Fraunhofer IAF. Die Wafer werden vollständig in der hauseigenen Halbleiterlinie hergestellt und getestet ¬ einschließlich Design, Epitaxie, Waferverarbeitung und Charakterisierung. © Fraunhofer IAF / Frontside processed 4-inch GaN-on SiC wafer of Fraunhofer IAF´s GaN07 technology. The wafers are completely fabricated and tested in Fraunhofer IAF´s III-V process line including design and fabrication of processing mask sets, epitaxy, wafer processing and characterization. © Fraunhofer IAF
  • Know How, Institut

EuMW 2025: Fraunhofer IAF presents 70 nm GaN transistor for high-throughput satellites

Semiconductor technology for broadband satellite communications achieves record efficiency

Researchers at Fraunhofer IAF have developed a GaN transistor technology with a gate length of 70 nm that achieves record efficiency values under typical satellite conditions. In the future, this technology aims to enable compact active antennas for high-bitrate data transfers in the Ka, Q, and W-ba…

Qualitätsuntersuchungen im Wafer-Herstellungsprozess. © Fraunhofer IPMS / Quality inspection in the wafer manufacturing process. © Fraunhofer IPMS
  • Ultrapure media (water, ...)

Pure water for sustainable semiconductor production

Fraunhofer IPMS, AlixLabs and NSS Water Partner to Revolutionize Sustainable Ultrapure Water Management in Semiconductor Manufacturing

AlixLabs and NSS Water are pleased to announce a strategic collaboration to develop sustainable and cost-effective ultrapure water (UPW) management solutions for chip production. Amid rising concerns over the semiconductor industry's ever-increasing water consumption the two Swedish companies will t…

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