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Becker HJM ClearClean Buchta



28nm pitch single-exposure patterning using Inpria’s MOx process on a 0.33NA EUV full field scanner after Ru metallization. 24nm pitch lines/spaces achieved on a 0.33NA NXE:3400B full-field scanner, (left) after development and (right) after etching at the critical dimension (CD) (uLER = unbiased line-edge roughness). 28nm contact holes, achieved with a 0.33NA NXE:3400 full-field scanner, after development.

Proven correlation between morphological and electrical data on 28nm pitch line/spaces increases understanding of stochastic defectivity impact on device reliability/yield

Imec Pushes Single-Exposure Patterning Capability of 0.33NA EUVL to its Extreme Limits

This week, at the 2021 SPIE Advanced Lithography Conference, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, and ASML, the world’s leading manufacturer of semiconductor lithography equipment, present several papers that demonstrate the ultimate single-e…

Collaboration between Sarcura and imec aims to develop a silicon photonics-based cytometry solution allowing real-time process control and manipulation of cells.

SARCURA and imec to collaborate on high throughput cytometry solution for automated (T-)cell separation, tackling manufacturing challenges of cell and gene therapies

Sarcura GmbH, an Austrian early-stage technology startup, today announced that it has entered a collaboration with imec, a world-leading research and innovation hub in nanoelectronics and digital technologies to develop a silicon chip-based prototype of a cytometer for automated cell separation brin…

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C-Tec Systec & Solutions GmbH Pfennig Reinigungstechnik GmbH Vaisala