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Vertical buffer leakage current in forward conduction, measured on 1200V GaN-on-QST® at two different temperatures: (left) 25°C and (right) 150°C. Imec’s 1200V buffer shows a vertical leakage current below 1µA/mm² at 25°C and below 10µA/mm² at 150°C up to 1200V with a breakdown voltage exceeding 1800V at both 25°C and 150°C, making it suitable for the processing of 1200V devices.

This breakthrough result paves the way for GaN to enter into the SiC high voltage domain

Imec and AIXTRON Demonstrate 200 mm GaN Epitaxy on AIX G5+ C for 1200V Applications with Breakdown in Excess of 1800V

Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, and AIXTRON, the leading provider of deposition equipment for compound semiconductor materials, have demonstrated epitaxial growth of gallium-nitride (GaN) buffer layers qualified for 1200V applications on…

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